An analytical model for electronic noise in a cryogenic bolometer detector readout circuit

Abstract This paper presents an analytical model to quantify the measured noise in a cryogenic bolometer readout circuit. The includes contributions from bias resistors and sensor resistors, voltage current of amplifier, cable capacitance. parameters are empirically estimated using frequency domain analysis data indigenously developed Neutron Transmutation Doped (NTD) Ge sensors. is shown describe for NTD sensors over wide range resistances corresponding temperatures 20–70 mK. Relative different components discussed it that contribution overall differential amplifier at 300 K dominant source. It observed flicker significantly lower than specified datasheet. present study also indicates desirable value resistance ( R ) considerations ≲ 1 GΩ ∼ 20